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Other articles related with "p-type GaN"：
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127803 |
Shuang-Tao Liu(刘双韬), Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Yuan Peng(彭莉媛), Li-Qun Zhang(张立群), Wen-Jie Wang(王文杰), Mo Li(李沫) |
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Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures |
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Chin. Phys. B
2018 Vol.27 (12): 127803-127803
[Abstract]
(625)
[HTML 1 KB]
[PDF 471 KB]
(174)
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27102 |
Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ling-Cong Le(乐伶聪), Xiao-Jing Li(李晓静), Xiao-Guang He(何晓光), Li-Qun Zhang(张立群), Hui Yang(杨辉) |
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Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films |
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Chin. Phys. B
2016 Vol.25 (2): 27102-027102
[Abstract]
(707)
[HTML 1 KB]
[PDF 722 KB]
(429)
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96804 |
Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光), Zhang Li-Qun (张立群), Liu Jian-Ping (刘建平), Zhang Shu-Ming (张书明), Yang Hui (杨辉) |
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Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN |
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Chin. Phys. B
2015 Vol.24 (9): 96804-096804
[Abstract]
(813)
[HTML 1 KB]
[PDF 330 KB]
(349)
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68801 |
Yang Jing (杨静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Li Liang (李亮), Wu Liang-Liang (吴亮亮), Le Ling-Cong (乐伶聪), Li Xiao-Jing (李晓静), He Xiao-Guang (何晓光), Wang Hui (王辉), Zhu Jian-Jun (朱建军), Zhang Shu-Ming (张书明), Zhang Bao-Shun (张宝顺), Yang Hui (杨辉) |
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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells |
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Chin. Phys. B
2014 Vol.23 (6): 68801-068801
[Abstract]
(595)
[HTML 1 KB]
[PDF 429 KB]
(477)
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